SPA12N50C3 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SPA12N50C3

Cool MOS™ Power Transistor

Infineon Technologies 

SPP12N50C3, SPB12N50C3

SPI12N50C3, SPA12N50C3

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

2

Ω

10 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 7 A, VGS = 10 V

2.1 SPP12N50C3

Ω

1.8

1.6

4V 4.5V 5V

5.5V

6V

1.6

1.4

1.4

1.2

1.2

1

1

0.8

6.5V

0.6

8V

20V

0.4

0 2 4 6 8 10 12 14 16 A 20

ID

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

40

A

25°C

32

28

24

150°C

0.8

0.6

98%

0.4

typ

0.2

0

-60 -20 20

60 100 °C

180

Tj

12 Typ. gate charge

VGS = f (QGate)

parameter: ID = 11.6 A pulsed

SPP12N50C3

16

V

12

10

0,2 VDS max

0,8 VDS max

20

8

16

6

12

4

8

2

4

0

0 1 2 3 4 5 6 7 8 V 10

VGS

Rev. 2.1

Page 7

0

0

10 20 30 40 50 nC

70

QGate

2004-03-29

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