FDD120AN15A0_F085 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDD120AN15A0_F085 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
150
VDS=150V, TJ = 25oC
-
VGS = 0V
TJ = 175oC(Note 4)
-
VGS = ±20V
-
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
2.0
ID = 4A,
TJ = 25oC
-
VGS= 10V TJ = 175oC(Note 4) -
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
-
f = 1MHz
-
VGS = 0 to 10V
VDD = 75V
-
VGS = 0 to 2V
ID = 4A
-
-
-
Typ
-
-
-
-
3.0
90.5
227
743
85
20
3.4
11.3
1.4
3.1
2.6
Max Units
-
V
1
μA
1
mA
±100 nA
4.0
V
120 mΩ
302 mΩ
-
pF
-
pF
-
pF
-
Ω
14
nC
1.6
nC
-
nC
-
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
-
-
VDD = 75V, ID = 4A,
-
VGS = 10V, RGEN = 24Ω
-
-
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
ISD = 4A, VGS = 0V
ISD = 2A, VGS = 0V
-
-
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 4A, dISD/dt = 100A/μs,
-
VDD=120V
-
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
-
31
ns
14
-
ns
13
-
ns
34
-
ns
15
-
ns
-
59
ns
-
1.25
V
-
1.2
V
46
60
ns
94
108
nC
FDD120AN15A0_F085 Rev. C1
2
www.fairchildsemi.com
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