SPA11N80C3(2005) Просмотр технического описания (PDF) - Infineon Technologies
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| SPA11N80C3 Datasheet PDF : 0 Pages | |||
SPP11N80C3
SPA11N80C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 640 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
Tsold
Values
Unit
min. typ. max.
-
-
0.8 K/W
-
-
3.7
-
-
62
-
-
80
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11A
- 870
breakdown voltage
-V
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=680µA, VGS=VDS 2.1
VDS=800V, VGS=0V,
Tj=25°C
-
Tj=150°C
-
3
3.9
µA
0.5 20
- 200
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=7.1A
Tj=25°C
Tj=150°C
-
- 100 nA
Ω
- 0.39 0.45
-
1.1
-
Gate input resistance
RG
f=1MHz, open drain
-
0.7
-
Rev. 2.4
Page 2
2005-08-24
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