SPA11N80C3(2005) Просмотр технического описания (PDF) - Infineon Technologies
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| SPA11N80C3 Datasheet PDF : 0 Pages | |||
SPP11N80C3
SPA11N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
RDS(on)
ID
800 V
0.45 Ω
11 A
• Periodic avalanche rated
PG-TO220-3-31 PG-TO220
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
3
12
P-TO220-3-31
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N80C3
SPA11N80C3
Package
Ordering Code
PG-TO220 Q67040-S4438
PG-TO220-3-31 SP000216320
Marking
11N80C3
11N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.2A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
Unit
SPP
SPA
A
11
111)
7.1
7.11)
33
33 A
470
470 mJ
0.2
0.2
11
11 A
±20
±20 V
±30
±30
156
41 W
-55...+150
°C
Rev. 2.4
Page 1
2005-08-24
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