IXXN110N65C4H1 Просмотр технического описания (PDF) - IXYS CORPORATION

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Компоненты Описание

производитель

IXXN110N65C4H1

XPT™ 650V GenX4™ w/ Sonic Diode

IXYS CORPORATION 

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

2

2.4

2.0

1.6

1.2

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

Eoff

Eon - - - -

TJ = 150ºC , VGE = 15V

VCE = 400V

I C = 110A

I C = 55A

4

6

8

10

12

RG - Ohms

Fig. 14. Inductive Switching Energy Loss vs.

Junction Temperature

Eoff

Eon - - - -

RG = 2ΩVGE = 15V

VCE = 400V

I C = 110A

16

14

12

10

8

6

4

2

0

14

12

10

8

6

0.8

4

0.4

I C = 55A

2

0.0

25

0

50

75

100

125

150

TJ - Degrees Centigrade

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

160

170

140

tfi

td(off) - - - -

RG = 2Ω, VGE = 15V

120

VCE = 400V

150

100

80

130

60

TJ = 25ºC, 150ºC

40

110

20

0

90

55 60 65 70 75 80 85 90 95 100 105 110

IC - Amperes

IXXN110N65C4H1

Fig. 13. Inductive Switching Energy Loss vs.

Collector Current

2.6

8

Eoff

Eon - - - -

2.2

RG = 2ΩVGE = 15V

7

VCE = 400V

1.8

6

1.4

TJ = 150ºC

1.0

0.6

5

4

TJ = 25ºC

3

0.2

55

160

140

120

2

60 65 70 75 80 85 90 95 100 105 110

IC - Amperes

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

450

tfi

td(off) - - - -

TJ = 150ºC, VGE = 15V

400

VCE = 400V

350

100

300

80

250

I C = 110A

60

200

I C = 55A

40

150

20

100

0

50

2

4

6

8

10

12

14

RG - Ohms

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature

120

190

tfi

td(off) - - - -

100

RG = 2Ω, VGE = 15V

170

VCE = 400V

80

150

60

I C = 110A

40

130

I C = 55A

110

20

90

0

70

25

50

75

100

125

150

TJ - Degrees Centigrade

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