IRG4BC30U-S Просмотр технического описания (PDF) - International Rectifier

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производитель

IRG4BC30U-S

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4BC30U-S

1.6

RG = 23 Ω

T J = 150°C

VCC = 480V

VGE = 15V

1.2

0.8

1000

VGGE E= 20V

TJ = 125°C

100

SAFE OPERATING AREA

10

0.4

0.0

0

A

10

20

30

IC , Collector-to-Emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1

0.1

1

10

100

1000

VCE , Collector-to-E m itter V oltage (V )

Fig. 12 - Turn-Off SOA

6

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