SPW11N60C3(2003) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

SPW11N60C3
(Rev.:2003)

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPW11N60C3

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

Symbol

dv/dt

Value

50

Unit

V/ns

Symbol

RthJC

RthJA

Tsold

Values

Unit

min. typ. max.

-

-

1 K/W

-

-

62

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=11A

- 700

breakdown voltage

-V

-

Gate threshold voltage

Zero gate voltage drain current

VGS(th) ID=500µΑ, VGS=VDS 2.1

I DSS

VDS=600V, VGS=0V,

Tj=25°C,

-

Tj=150°C

-

3 3.9

µA

-

25

- 250

Gate-source leakage current

I GSS

Drain-source on-state resistance RDS(on)

VGS=30V, VDS=0V

VGS=10V, ID=7A,

Tj=25°C

Tj=150°C

-

- 100 nA

Ω

- 0.34 0.38

- 0.92 -

Gate input resistance

RG

f=1MHz, open Drain

-

0.86

-

Page 2

2003-09-17

Share Link: