SPB11N60C3(2001) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SPB11N60C3
(Rev.:2001)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60C3, SPB11N60C3

Preliminary data

SPI11N60C3

9 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

40

A

25°C

32

10 Gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS, ID = 0.5 mA

5

V

4

max.

28

3.5

typ.

24

150°C

3

20

2.5

min.

16

2

12

1.5

8

1

4

0.5

0

0 2 4 6 8 10 12 V 15

VGS

0

-60

-20

20

60

100 °C 160

Tj

11 Typ. gate charge

VGS = f (QGate)

parameter: ID = 11 A pulsed

SPP11N60C3

16

12 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

10 2 SPP11N60C3

V

A

12

0,2 VDS max

10

0,8 VDS max

8

10 1

6

4

2

0

0

10 20 30 40 50 nC

70

QGate

10 0

10 -1

0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

0.4 0.8 1.2 1.6 2 2.4 V 3

VSD

Page 7

2001-07-05

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