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11N60C3(2005) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге
Компоненты Описание
производитель
11N60C3
(Rev.:2005)
Infineon
Infineon Technologies Infineon
11N60C3 Datasheet PDF : 0 Pages
21 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
350
mJ
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
Tj
23 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
300
W
200
SPP11N60C3
SPI11N60C3, SPA11N60C3
22 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP11N60C3
720
V
680
660
640
620
600
580
560
540
-60 -20
20
60 100
24 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
pF
Ciss
10 3
°C
180
Tj
150
10 2
Coss
100
10 1
Crss
50
0
10
4
Rev. 2.6
10 5
Hz
10 6
f
10 0
0
100 200 300 400
V
600
VDS
Page 10
2005-09-21

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