SI4102DY Просмотр технического описания (PDF) - Vishay Semiconductors

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SI4102DY

N-Channel 100 V (D-S) MOSFET

Vishay Semiconductors 

Si4102DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

0.4

0.3

TJ = 150 °C

0.2

ID = 2.7 A

TJ = 25 °C

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

4.0

0.1

0.0

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

50

3.6

40

3.2

30

2.8

ID = 250 µA

20

2.4

10

2.0

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

Limited by RDS(on)*

0

0.001 0.01 0.1

1

10

100 1000

Time (s)

Single Pulse Power

100 µs

1

1 ms

10 ms

0.1

100 ms

TA = 25 °C

Single Pulse

BVDSS Limited

0.01

0.1

1

10

1s

10 s

DC

100

1000

VDS - Drain-to-Source Voltage (V)

* VGS minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

www.vishay.com

For technical questions, contact: pmostechsupport@vishay.com

Document Number: 69252

4

S13-0631-Rev. C, 25-Mar-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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