MSAGX75L60A Просмотр технического описания (PDF) - Microsemi Corporation
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MSAGX75L60A Datasheet PDF : 2 Pages
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MSAGX75L60A
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
SYMBOL
BVCES
VGE(th)
IGES
ICES
VCE(sat)
gfs
Cies
Coes
Cres
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Qg
Qge
Qgc
CONDITIONS
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 250 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8•BVCES
VGE = 0 V
VGE= 15V, IC= 60A
I C= 60A
VCE ≥ 10 V; IC = 60 A
T J = 25°C
T J = 125°C
TJ = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
VGE = 0 V, VCE = 25 V, f = 1 MHz
VGE = 15 V, V CE = 480 V,
IC = 60 A, R G = 2.7 Ω,
L= 100 µH note 2, 3
VGE = 15 V, V CE = 480 V,
IC = 60 A, R G = 2.7 Ω,
L= 100 µH note 2, 3
VGE = 15 V, V CE = 300V, I C = 50A
MIN TYP.
600
2.5
1.8
30
40
4000
340
100
50
210
600
500
16
50
240
3
1000
1000
26
200
35
80
MAX UNIT
V
5.0
V
±100
nA
±200
200
µA
1000
1.8
V
S
pF
ns
ns
800
ns
700
ns
mJ
ns
ns
mJ
ns
ns
mJ
250
nC
50
100
Notes
(1) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
(2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
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