IKP20N60T Просмотр технического описания (PDF) - Infineon Technologies

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IKP20N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKP20N60T, IKB20N60T

TrenchStop Series

IKW20N60T

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=175°C,

VCC=400V,IC=20A,

VGE=0/15V,

RG= 12 Ω

Lσ1)=131nH,

Cσ1)=31pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=175°C

VR=400V, IF=20A,

diF/dt=880A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

Value

Typ.

18

18

223

76

0.51

0.64

1.15

176

1.46

18.9

467

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

- A/µs

1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

4

Rev. 2.2 Dec-04

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