IKP20N60T(2008) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

IKP20N60T
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP20N60T

IKW20N60T

TJ=175°C

24A

20A

16A

TJ=25°C

12A

8A

4A

0A

600A/µs

900A/µs

1200A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR = 400V, IF = 20A,

Dynamic test circuit in Figure E)

-750A/µs

TJ=25°C

-600A/µs

-450A/µs

-300A/µs

TJ=175°C

-150A/µs

0A/µs

600A/µs

900A/µs

1200A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, IF=20A,

Dynamic test circuit in Figure E)

50A

40A

TJ=25°C

175°C

30A

20A

10A

0A

0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

2.0V

IF=40A

1.5V

1.0V

20A

10A

0.5V

0.0V

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

Power Semiconductors

10

Rev. 2.5 Sep. 08

Share Link: