PDTB113EU Просмотр технического описания (PDF) - NXP Semiconductors.
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PDTB113EU Datasheet PDF : 27 Pages
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Nexperia
PDTB1xxxU series
500 mA, 50 V PNP resistor-equipped transistors
Table 8. Characteristics …continued
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
R1
bias resistor 1 (input)
PDTB113EU
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
R2/R1 bias resistor ratio
PDTB113EU
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
Cc
collector capacitance VCB = 10 V;
IE = ie = 0 A; f = 1 MHz
fT
transition frequency VCE = 5 V;
IC = 50 mA;
f = 100 MHz
[1] Characteristics of built-in transistor.
Min Typ Max Unit
0.7 1.0
0.7 1.0
1.54 2.2
1.54 2.2
3.3 4.7
3.3 4.7
7.0 10
1.3 k
1.3 k
2.86 k
2.86 k
6.1 k
6.1 k
13
k
0.9 1.0 1.1
9.0 10
11
0.9 1.0 1.1
4.1 4.55 5.0
0.9 1
1.1
1.91 2.13 2.34
0.9 1.0 1.1
-
11
-
pF
[1] -
140 -
MHz
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© Nexperia B.V. 2017. All rights reserved
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