PDTB113EU Просмотр технического описания (PDF) - NXP Semiconductors.
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PDTB113EU Datasheet PDF : 27 Pages
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Nexperia
PDTB1xxxU series
500 mA, 50 V PNP resistor-equipped transistors
7. Characteristics
PDTB1XXXU_SER
Product data sheet
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 40 V; IE = 0 A
current
VCB = 50 V; IE = 0 A
ICEO
collector-emitter cut-off VCE = 50 V; IB = 0 A
current
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
PDTB113EU
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
hFE
DC current gain
PDTB113EU
VCE = 5 V; IC = 50 mA
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
VCEsat
VI(off)
collector-emitter
saturation voltage
off-state input voltage
PDTB113EU
IC = 50 mA;
IB = 2.5 mA
VCE = 5 V; IC = 100 A
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
VI(on)
on-state input voltage VCE = 0.3 V; IC = 20 mA
PDTB113EU
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
Min Typ Max Unit
-
-
100 nA
-
-
100 nA
-
-
0.5 A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
33
-
70
-
40
-
70
-
60
-
70
-
70
-
-
-
4.0 mA
0.8 mA
2.0 mA
0.65 mA
0.9 mA
0.6 mA
0.4 mA
-
-
-
-
-
-
-
100 mV
0.6 1.0 1.5 V
0.3 0.6 1.0 V
0.6 1.1 1.8 V
0.4 0.65 1.0 V
0.6 0.9 1.5 V
0.5 0.75 1.1 V
0.6 1.0 1.5 V
1.0 1.4 1.8 V
0.4 0.8 1.4 V
1.0 1.5 2.0 V
0.5 1.0 1.4 V
1.0 1.7 2.2 V
1.0 1.4 2.0 V
1.0 2.2 3.0 V
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