PDTB113EU Просмотр технического описания (PDF) - NXP Semiconductors.
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PDTB113EU Datasheet PDF : 27 Pages
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Nexperia
PDTB1xxxU series
500 mA, 50 V PNP resistor-equipped transistors
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation
Tamb 25 C
[1] -
[2] -
Tj
junction temperature
-
Tamb
ambient temperature
55
Tstg
storage temperature
55
Max Unit
300
mW
425
mW
175
C
+175 C
+175 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
500
Ptot
(mW)
(1)
400
(2)
300
aaa-012426
200
100
0
-75
25
125
225
Tamb (°C)
(1) FR4 PCB, 4-layer copper, standard footprint
(2) FR4 PCB, single-sided copper, standard footprint.
Fig 1. Power derating curves
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min Typ Max Unit
[1] -
-
500 K/W
[2] -
-
353 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
PDTB1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 May 2014
© Nexperia B.V. 2017. All rights reserved
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