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ALTAIR04-900TR Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
ALTAIR04-900TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ALTAIR04-900TR Datasheet PDF : 29 Pages
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Electrical characteristics
ALTAIR04-900
Symbol
Table 4. Electrical characteristics (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
Zero-current detector
IZCDb
VZCDH
VZCDL
VZCDA
VZCDT
IZCDON
Input bias current
Upper clamp voltage
Lower clamp voltage
Arming voltage
Triggering voltage
Min. source current during MOSFET on-time
TBLANK Trigger blanking time after MOSFET turn-off
Line feed-forward
RFF Equivalent feed-forward resistor
Transconductance error amplifier
VREF Voltage reference
gm Transconductance
Gv Voltage gain
GB Gain-bandwidth product
Source current
ICOMP
Sink current
VCOMPH Upper COMP voltage
VCOMPL Lower COMP voltage
VCOMPBM Burst-mode threshold
Hys Burst-mode hysteresis
Current reference
VIREFx
GI
VCREF
Maximum value
Current loop gain
Current reference voltage
Current sense
tLEB Leading-edge blanking
td(H-L) Delay-to-output
VCSx
VCSdis
Max. clamp value
Hiccup-mode OCP level
1. Parameters track one to each other
VZCD = 0.1 to 3 V
IZCD = 1 mA
IZCD = - 1 mA
Positive-going edge
Negative-going edge
VCOMP 1.3 V
VCOMP = 0.9 V
0.1 1 µA
3.0 3.3 3.6 V
-90 -60 -30 mV
100 110 120 mV
50 60 70 mV
-25 -50 -75 µA
6
µs
30
IZCD = 1 mA
45
Ω
Tj = 25 °C (1)
Tj = -40 to 125 °C and
Vcc = 12 V to 23 V (1)
2.46 2.5 2.54
V
2.42
2.58
ΔICOMP = ±10 µA
VCOMP = 1.65 V
Open loop
1.3 2.2 3.2 mS
73
dB
500
KHz
VZCD = 2.3 V, VCOMP = 1.65 V 70 100
µA
VZCD = 2.7 V, VCOMP = 1.65 V 400 750
µA
VZCD = 2.3 V
2.7
V
VZCD = 2.7 V
0.7
V
1
V
65
mV
VCOMP = VCOMPL (1)
VCOMP = VCOMPH
1.5 1.6 1.7 V
0.5 0.6 0.7
0.38 0.4 0.42 V
dVcs/dt = 200 mV/µs (1)
(1)
200 250 300 ns
300
ns
0.7 0.75 0.8 V
0.92 1 1.08 V
8/29
DocID18211 Rev 3

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