KSC5338D Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSC5338D Datasheet PDF : 8 Pages
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KSC5338D/KSC5338DW
NPN Triple Diffused Planar Silicon Transistor
Features
• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D2-PAK
D2-PAK
1
TO-220
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
IBP
*Base Current (Pulse)
PC
Power Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Value
1000
450
12
5
10
2
4
75
150
- 55 to 150
Thermal Characteristics
Symbol
Rθjc
Rθja
TL
Parameter
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Rating
1.65
62.5
270
May 2010
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
°C
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
1
www.fairchildsemi.com
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