KSC5338D(2000) Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSC5338D Datasheet PDF : 8 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cib
Cob
fT
VF
tfr
VCE(DSAT)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
Diode Froward Recvery Time
(di/dt=10A/µs)
Dynamic Saturation Voltage
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IC=0
VCB=800V, IE=0
VCES=1000V,
IEB=0
TC=25°C
TC=125°C
VCE=450V, IB=0 TC=25°C
TC=125°C
VEB=10V, IC=0
VCE=1V, IC=0.8A TC=25°C
TC=125°C
VCE=1V, IC=2A
TC=25°C
TC=125°C
VCE=2.5V, IC=1A TC=25°C
TC=125°C
IC=0.8A, IB=0.08A TC=25°C
TC=125°C
IC=2A, IB=0.4A
TC=25°C
TC=125°C
IC=0.8A, IB=0.04A TC=25°C
TC=125°C
IC=1A, IB=0.2A
TC=25°C
TC=125°C
ICS=0.8A,
IB=0.08A
TC=25°C
TC=125°C
IC=2A, IB=0.4A
TC=25°C
TC=125°C
VEB=10V, IC=0.5A, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.5A,VCE=10V
IF=1A, IC=1mA,
IE=0
TC=25°C
TC=125°C
IF=2A
TC=25°C
TC=125°C
IF=0.4A
IF=1A
IF=2A
IC=1A, IB1=100mA TC=25°C
VCC=300V at 1 µs TC=125°C
IC=1A, IB1=100mA TC=25°C
VCC=300V at 3 µs TC=125°C
IC=2A, IB1=400mA TC=25°C
VCC=300V at 1 µs TC=125°C
IC=2A, IB1=400mA TC=25°C
VCC=300V at 3 µs TC=125°C
Min.
1000
450
12
15
10
6
4
18
14
Typ.
25
14
9
6
25
18
0.35
0.55
0.47
0.9
0.9
1.8
0.22
0.3
0.8
0.65
0.9
0.8
550
60
11
0.86
0.79
0.95
0.88
460
360
325
8
15
2.9
8
9
17
1.9
8.5
Max.
10
100
500
100
500
10
Units
V
V
V
µA
µA
µA
µA
µA
µA
0.5
V
0.75 V
0.75 V
1.1
V
1.5
V
2.5
V
0.5
V
0.6
V
1.0
V
0.9
V
1.0
V
0.9
V
750 pF
100 pF
MHz
1.3
V
V
1.5
V
V
ns
ns
ns
V
V
V
V
V
V
V
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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