SPD04N60C3 Просмотр технического описания (PDF) - Infineon Technologies
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SPD04N60C3 Datasheet PDF : 12 Pages
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9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 4.5 A pulsed
SPD04N60C3
16
V
Final data
SPD04N60C3
SPU04N60C3
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPD04N60C3
A
12
10 0.2 VDS max
0.8 VDS max
10 1
8
6
4
2
0
0 4 8 12 16 20 24 nC 30
QGate
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
11 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=4.5A
2400
A/µs
12 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=4.5 A
500
ns
400
350
1600
300
1200
800
di/dt(on)
400
di/dt(off)
0
0 20 40 60 80 100 120 140 160 Ω 200
RG
Page 7
250
td(off)
tf
200
td(on)
tr
150
100
50
0
0 20 40 60 80 100 120 140 160 Ω 190
RG
2003-10-02
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