SPD04N60C3 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SPD04N60C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPD04N60C3

SPU04N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Inverse diode continuous

forward current

IS

TC=25°C

-

-

4.5 A

Inverse diode direct current,

ISM

pulsed

-

- 13.5

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

recovery current

VSD

trr

Qrr

I rrm

dirr/dt

VGS=0V, IF=IS

VR=480V, IF=IS ,

diF/dt=100A/µs

-

1 1.2 V

- 300 500 ns

-

2.6

- µC

-

18

-A

-

- 900 A/µs

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

Value

typ.

typ.

Thermal resistance

Thermal capacitance

Rth1

Rth2

Rth3

Rth4

Rth5

Rth6

0.039

0.074

0.132

0.555

0.529

0.169

K/W

Cth1

Cth2

Cth3

Cth4

Cth5

Cth6

0.00007347

0.0002831

0.0004062

0.001215

0.00276

0.029

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th ,n

Tamb

Page 4

2003-10-02

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