SPD04N60C3 Просмотр технического описания (PDF) - Infineon Technologies
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SPD04N60C3 Datasheet PDF : 12 Pages
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Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
SPD04N60C3
SPU04N60C3
VDS @ Tjmax 650
V
RDS(on)
0.95 Ω
ID
4.5 A
P-TO251
P-TO252
Type
SPD04N60C3
SPU04N60C3
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4412
-
Marking
04N60C3
04N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 3.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 4.5 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage static
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
4.5
2.8
13.5
130
0.4
4.5
±20
±30
50
-55... +150
Unit
A
mJ
A
V
W
°C
Page 1
2003-10-02
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