13N80K5 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

13N80K5

N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package

STMicroelectronics 

STFI13N80K5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 400 V, ID = 6A,

RG=4.7 Ω, VGS=10 V

(see Figure 18)

Min. Typ. Max. Unit

-

16

-

ns

-

16

-

ns

-

42

-

ns

-

16

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM

VSD(1)

Source-drain current (pulsed)

Forward on voltage

VGS=0, ISD= 12 A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 12 A, VDD= 60 V

di/dt = 100 A/µs,

(see Figure 17)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 12 A,VDD= 60 V

di/dt=100 A/µs,

Tj=150 °C

(see Figure 17)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

14 A

-

56 A

-

1.5 V

- 406

ns

- 5.7

µC

- 28

A

- 600

ns

- 7.9

µC

- 26

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0

30 -

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

DocID027200 Rev 2

5/13

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