FDMC4435BZ Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

FDMC4435BZ

P-Channel Power Trench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

'BVDSS

'TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = -250 PA, VGS = 0 V

ID = -250 PA, referenced to 25 °C

VDS = -24 V,

VGS = 0 V,

TJ = 125 °C

VGS = ±25 V, VDS = 0 V

-30

V

- 22

mV/°C

-1

PA

-100

±10

PA

On Characteristics

VGS(th)

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS

Forward Transconductance

VGS = VDS, ID = -250 PA

ID = -250 PA, referenced to 25 °C

VGS = -10 V, ID = -8.5 A

VGS = -4.5 V, ID = -6.3 A

VGS = -10 V, ID = -8.5 A,

TJ = 125 °C

VDD = -5 V, ID = -8.5 A

-1.0 -1.9 -3.0

V

5.3

mV/°C

15

20

23

37

m:

21

28

24

S

Dynamic Characteristics

Ciss

Coss

Crss

Rg

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = -15 V, VGS = 0 V,

f = 1 MHz

f = 1 MHz

1540 2045 pF

295 395

pF

260 385

pF

5

:

Switching Characteristics

td(on)

tr

td(off)

tf

Qg

Qg

Qgs

Qgd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = -15 V, ID = -8.5 A,

VGS = -10 V, RGEN = 6 :

VGS = 0 V to -10 V

VGS = 0 V to -4.5 V

VDD = -15 V,

ID = -8.5 A

10

20

ns

6

12

ns

34

55

ns

20

36

ns

33

46

nC

17

24

nC

5

nC

9

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage VGS = 0 V, IS = -8.5A

VGS = 0 V, IS = -1.9 A

(Note 2)

(Note 2)

0.92 1.5

V

0.75 1.2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IF = -8.5 A, di/dt = 100 A/Ps

22

ns

11

nC

NOTES:

1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by

the user's board design.

a. 53 °C/W when mounted on

a 1 in2 pad of 2 oz copper

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.

3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = -7 A, VDD = -27 V, VGS = -10 V. 100% test at L = 3 mH, IAS = -4 A.

4. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

©2010 Fairchild Semiconductor Corporation

2

FDMC4435BZ Rev.D2

www.fairchildsemi.com

Share Link: