FDMC4435BZ(2008) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDMC4435BZ Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
50
VGS = -4.5V
40
VGS = -5V
VGS = -10V
30
VGS = - 4V
20
10
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -3.5V
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
PULSE DURATION = 80µs
3.5
DUTY CYCLE = 0.5%MAX
3.0
VGS = -3.5V
VGS = -4V
2.5
2.0
VGS = -4.5V
1.5
1.0
0.5
0
10
20
30
-ID, DRAIN CURRENT(A)
VGS = -5V
VGS = -10V
40
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -8.5A
1.4 VGS = -10V
1.2
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
ID = -8.5A
40
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = -5V
30
20
10
0
1
TJ = 150oC
TJ = 25oC
TJ = -55oC
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
30
TJ = 125oC
20
TJ = 25oC
10
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
50
10
VGS = 0V
TJ = 150oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMC4435BZ Rev.C
3
www.fairchildsemi.com
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