SPA16N50C3 Просмотр технического описания (PDF) - Infineon Technologies
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SPA16N50C3 Datasheet PDF : 13 Pages
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SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
2
Ω 4V 4.5V
5V
6V
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 10 A, VGS = 10 V
SPP16N50C3
1.6
Ω
1.2
1.2
1
8V
20V
0.8
0.8
0.6
0.4
98%
0.4
typ
0.2
0
0
5
10
15
20
A
30
ID
0
-60 -20 20
60 100 °C
180
Tj
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
60
A
50
Tj = 25°C
45
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 16 A pulsed
SPP16N50C3
16
V
12
40
35
10
0,2 VDS max
0,8 VDS max
30
Tj = 150°C
8
25
6
20
15
4
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
2
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
Rev. 2.1
Page 7
2004-04-07
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