SPI16N50C3(2007) Просмотр технического описания (PDF) - Infineon Technologies
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SPI16N50C3 Datasheet PDF : 14 Pages
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SPP16N50C3
SPI16N50C3, SPA16N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Characteristics
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS≥2*ID*RDS(on)max,
ID=10A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 400V
-
14
-S
- 1600 - pF
- 800 -
-
30
-
-
64
-
- 124 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
VDD=380V, VGS=0/10V,
-
10
- ns
tr
ID=16A, RG=4.3Ω
-
8
-
td(off)
-
50
-
tf
-
8
-
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=380V, ID=16A
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=380V, ID=16A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=380V, ID=16A
-
7
- nC
-
36
-
-
66
-
-
5
-V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 3.0
Page 3
2007-08-30
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