IXFH16N50P3 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXFH16N50P3 Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
TO-220
TO-247
IXFA16N50P3 IXFP16N50P3
IXFH16N50P3
Characteristic Values
Min. Typ. Max
9
15
S
2.8
1515
pF
193
pF
7
pF
19
ns
6
ns
44
ns
9
ns
29
nC
7
nC
10
nC
0.50
0.21
0.38 C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V, Note1
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 8A, -di/dt = 100A/μs
QRM
IRM
VR = 100V
Characteristic Values
Min. Typ. Max
16 A
64 A
1.4 V
250 ns
0.8 C
8.7
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
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