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IGB10N60T Просмотр технического описания (PDF) - Infineon Technologies

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IGB10N60T Datasheet PDF : 12 Pages
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IGB10N60T
TRENCHSTOPSeries
p
Low Loss IGBT : IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOPtechnology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IGB10N60T
VCE
600V
IC
10A
VCE(sat),Tj=25°C
1.5V
Tj,max Marking Code
175C
G10T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
Unit
600
V
24
18
A
30
30
20
V
5
s
110
W
-40...+175
-55...+150
C
260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.1 30.04.2015

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