G10T60(2006) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

G10T60
(Rev.:2006)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGP10N60T

q

Low Loss IGBT in TrenchStop® and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

C

• Designed for :

- Variable Speed Drive for washing machines and air

conditioners

- induction cooking

G

E

- Uninterrupted Power Supply

• TrenchStop® and Fieldstop technology for 600 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

PG-TO-220-3-1

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

IKP10N60T

VCE

600V

IC

VCE(sat),Tj=25°C Tj,max Marking Code

Package

10A

1.5V

175°C G10T60 PG-TO-220-3-1

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current, limited by Tjmax

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 175°C

Gate-emitter voltage

Short circuit withstand time2)

VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C

Power dissipation TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Symbol

VCE

IC

ICpuls

-

VGE

tSC

Ptot

Tj

Tstg

Value

Unit

600

V

A

20

10

30

30

±20

V

5

µs

110

W

-40...+175

°C

-55...+175

260

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.2 June 06

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