FGPF4633(2010) Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FGPF4633 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
70A
8
40A
4
IC = 20A
0
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 100V
200V
6
3
0
0
15
30
45
60
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
70
Figure 8. Capacitance Characteristics
3000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
2000
Cies
1000
Coes
Cres
0
0.1
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
500
100
10µs
100µs
10
1ms
10 ms
DC
1
Single Nonrepetitive
0.1
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100 500
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
500
tr
10
6
0
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10
20
30
40
50
Gate Resistance, RG [Ω]
100
40
0
td(off)
tf
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10
20
30
40
50
Gate Resistance, RG [Ω]
FGPF4633 Rev. A
4
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