FGPF4633(2010) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGPF4633 Datasheet PDF : 8 Pages
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FGPF4633
330V PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
February 2010
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Potted)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5µsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
300
30.5
12.2
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.1
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
1
FGPF4633 Rev. A
www.fairchildsemi.com
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