NES1823P-100 Просмотр технического описания (PDF) - NEC => Renesas Technology

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NES1823P-100

100W L-BAND PUSH-PULL POWER GaAs MESFET

NEC => Renesas Technology 

NES1823P-100

TYPICAL CHARACTERISTICS (TA = +25°C)

POWER MATCHING AND IM3 MATCHING

NEC produces two type matching circuits, power matching and IM3 matching. Power matching circuit is used our

production line. And the IM3 matching circuit is useful for the customers to design the special tuning application. The

power matching is designed as this, input impedance is gain-matching, output is matched with power matching

impedance which is calculated with large signal simulation model. The IM3 matching is designed as this, input

impedance is matched to the impedance which has the direction of decreasing S21 phase-shift, output impedance is

matched to the almost same as the efficiency matching impedance. Those typical RF data are shown as this, GL =

10.2 dB Pout = 50.0 dBm IM3 = –28 dBc at power matching, GL = 10.0 dB Pout = 49.3 dBm IM3 = –31 dBc at IM3

matching (@2 tone Pout = 40 dBm).

Preliminary Data Sheet

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