NES1823P-100 Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

NES1823P-100

100W L-BAND PUSH-PULL POWER GaAs MESFET

NEC => Renesas Technology 

NES1823P-100

RECOMMENDED OPERATING LIMITS

Parameter

Drain to Source Voltage

Gain Compression

Channel Temperature

Set Drain CurrentNote 1

Gate ResistanceNote 2

Symbol

VDS

Gcomp

Tch

IDset

Rg

Test Condition

MIN.

Notes 1. IDset = 3.0 A each drain, VDS = 10 V, RF OFF.

2. Rg is the series resistance between the gate supply and FET gate.

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

Saturated Drain Current

Pinch-off Voltage

Thermal Resistance

Output Power

Drain Current

Drain Efficiency

Linear Gain

Symbol

IDSS

Vp

Rth

Pout

ID

ηD

GL

Test Conditions

VDS = 2.5 V, VGS = 0 V

VDS = 2.5 V, IDS = 330 mA

Channel to Case

f = 2.2 GHz, VDS = 10 V

Pin = +42.5 dBm, Rg = 12.5 Ω

IDset = 6.0 A Total (RF OFF)Note

MIN.

–4.0

49.0

9.0

Note IDset = 3.0 A each drain

TYP.

10.0

6.0

10

TYP.

76

–2.6

0.6

50.0

20.0

50

11.0

MAX.

Unit

10.0

V

3.0

dB

+150

°C

8.0

A

12.5

Ω

MAX.

0.8

32.5

Unit

A

V

°C/W

dBm

A

%

dB

2

Preliminary Data Sheet

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