VS-12TTS08-M3 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-12TTS08-M3 Datasheet PDF : 7 Pages
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VS-12TTS08PbF, VS-12TTS08-M3
Vishay Semiconductors
110
At any rated load condition and with
100
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
90
at 50 Hz 0.0100s
80
70
60
50 VS-12TTS08
40
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
12TTS08
100
120
Maximum non-repetitive surge current
110
versus pulse train duration.
Initial Tj = Tj max.
100
No voltage reapplied
Rated Vrrm reapplied
90
80
70
60
50 VS-12TTS08
40
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
TJ= 25°C
10
TJ= 125°C
1
0.5 1 1.5 2 2.5 3 3.5
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
1 D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
0.0001
Steady State Value
(DC Operation)
Single Pulse
12TTS08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 26-Jul-13
4
Document Number: 94380
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