VS-12TTS08PBF Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-12TTS08PBF Datasheet PDF : 7 Pages
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www.vishay.com
VS-12TTS08PbF, VS-12TTS08-M3
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
VALUES
- 40 to 125
UNITS
°C
1.5
62
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
12TTS08
125
12TTS08
RthJC (DC) = 1.5 K/ W
120
115
Conduc tion Angle
110
105
100
0
30°
60°
90°
120°
180°
2
4
6
8
10
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
10
180°
9
120°
8
90°
60°
7
30°
6
5 RMSLimit
4
3
Conduction Angle
2
12TTS08
1
TJ= 125°C
0
0123456789
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
125
12TTS08
R thJC(DC) = 1.5 K/ W
120
115
Conduction Period
110
105
100
0
30°
60°
90°
120°
180° DC
2 4 6 8 10 12 14
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
14
DC
12
180°
120°
10
90°
60°
30°
8
6 RMSLimit
4
Conduction Period
12TTS08
2
TJ = 125°C
0
0 2 4 6 8 10 12 14
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 26-Jul-13
3
Document Number: 94380
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