2SK2956 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
2SK2956
Hitachi -> Renesas Electronics
2SK2956 Datasheet PDF : 9 Pages
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2SK2956
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
5
2
di / dt = 50 A / µs
1
0.1 0.3
VGS = 0, Ta = 25 °C
1 3 10 30 100
Reverse Drain Current I DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
300
VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
20
I D = 50 A
40
16
30 VDS
20
VGS
VDD = 5 V 12
10 V
25 V
8
10
VDD = 25 V
4
10 V
5V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
VGS = 10 V, V DD = 10 V
PW = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
20
10
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I D (A)
5
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