T610T-8FP Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
T610T-8FP Datasheet PDF : 9 Pages
| |||
Characteristics
T610T-8FP
Figure 5. On-state characteristics (maximum
values)
100 ITM(A)
Tj max :
Vto = 0.85 V
10
Rd = 75 mΩ
Tj = 150 °C
Tj= 25 °C
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Figure 6. Surge peak on-state current versus
number of cycles
50 ITSM(A)
45
40
35
30
25
20
15
10 Repetitive
5 TC= 117 °C
0
1
Non repetitive
Tj initial=25°C
t = 20 ms
One cycle
Number of cycles
10
100
1000
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I2t
1000 ITSM(A), I²t (A²s)
dI/dt limitation: 100 A/µs
Tj initial = 25 °C
ITSM
100
Half cycle sinusoidal pulse with
width tp < 10 ms
10
0.01
0.10
I²t
tp(ms)
1.00
10.00
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
IGT, VGT [ Tj] / IGT ,VGT [ T j = 25 °C ]
2.5
IGT Q1-Q2
2.0
IGT Q3
1.5
1.0 VGT
0.5
0.0
-50 -25 0
Tj(°C)
25 50 75
100 125 150
Figure 9. Relative variation of static dV/dt Figure 10. Relative variation of holding current
immunity versus junction temperature (typical
and latching current versus junction
values)
temperature (typical values)
5 dV/dt [Tj ] / dV/dt [Tj =150 °C]
VD = VR = 402 V ; 150°C
4
VD = VR = 536 V ; 125°C
3
2
1
Tj(°C)
0
25
50
75
100
125
150
2.0 IH, IL [Tj ] / I H, IL [T j = 25 °C ]
IH
1.5
IL
1.0
0.5
0.0
-50 -25 0
Tj(°C)
25 50 75
100 125 150
4/9
DocID025568 Rev 2
Share Link: 