STPS40M60CR Просмотр технического описания (PDF) - STMicroelectronics
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STPS40M60CR Datasheet PDF : 10 Pages
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Characteristics
STPS40M60C
Figure 4. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 6.
260 IM(A)
240
220
200
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
t
δ =0.5
1.E-02
1.E-01
TC=25°C
TC=75°C
TC=125°C
t(s)
1.E+00
Figure 7.
Relative thermal impedance
junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
Figure 8.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
IR(mA)
1.E+03
Figure 9.
C(pF)
10000
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
1000
VR(V)
100
10
20
30
40
50
60
1
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
10
100
4/10
Doc ID 018813 Rev 1
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