STPS40M60CR Просмотр технического описания (PDF) - STMicroelectronics

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STPS40M60CR

High efficiency 60 V power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS40M60C

Table 2.

Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless

otherwise specified)

Symbol

Parameter

Value Unit

VRRM Repetitive peak reverse voltage

60

V

IF(RMS) Forward rms current

30

A

IF(AV) Average forward current, δ = 0.5

Tc = 130 °C Per diode

20

A

Tc = 120 °C Per device

40

IFSM Surge non repetitive forward current

PARM(1) Repetitive peak avalanche power

tp = 10 ms sinusoidal

Tj = 25 °C, tp = 1 µs

220

A

23000

W

VARM(2)

Maximum repetitive peak

avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 86.3 A

80

V

Tstg Storage temperature range

Tj Maximum operating junction temperature(3)

-65 to +175 °C

150

°C

1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

2. See Figure 13

3.

dPtot

dTj

<1

Rth(j-a)

condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c) Junction to case

Rth(c) Coupling

per diode

total

1.40

°C/W

0.95

0.50

°C/W

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

2/10

Doc ID 018813 Rev 1

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