DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L5150GJ Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
L5150GJ
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L5150GJ Datasheet PDF : 29 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical specifications
L5150GJ
2.3
Electrical characteristics
Values specified in this section are for VS = 5.6 V to 31 V, Tj = -40 °C to +150 °C unless
otherwise stated.
Table 5. General
Pin Symbol
Parameter
Test condition
Vo
Vo
Vo
Vo
Vo
VS, Vo
Vo
VS, Vo
VS, Vo
Vo
Vo_ref
Vo_ref
Vo_ref
Ishort
Ilim
Vline
Vload
Vdp
SVR
Ioth_H
Output voltage
Output voltage
Output voltage
Short-circuit current
Output current capability (1)
Line regulation voltage
Load regulation voltage
Drop voltage (2)
Ripple rejection
Normal consumption mode
output current
VS = 8 V to 18 V,
Io = 8 mA to 150 mA
VS = 5.6 V to 31 V,
Io = 8 mA to 150 mA
VS = 5.6 V to 31 V,
Io = 0.1 mA to 8 mA
VS = 13.5 V
VS = 13.5 V
VS = 6 V to 28 V,
Io = 30 mA
VS = 8 V to 18 V,
Io = 8 mA to 150 mA
VS = 13.5 V,
Tj = 25 °C,
Io = 8 mA to 150 mA
Io = 150 mA
fr = 100 Hz (3)
VS = 8 V to 18 V
Vo
Ioth_L
Very low consumption mode
output current
VS = 8 V to 18 V
Vo
Ioth_Hyst
Output current switching
threshold hysteresis
VS, Vo
Current consumption
Iqs with regulator disabled
Iqs = IVs Io
VS, Vo
Iqn_1
Current consumption
with regulator enabled
Iqn_1 = IVs Io
VS, Vo
Iqn_150
Current consumption
with regulator enabled
Iqn_150 = IVs Io
VS = 13.5 V,
Tj = 25 °C
VS = 13.5 V,
En = low
VS = 13.5 V,
Io = 0.1 mA to 1 mA,
En = high
Tj = 25 °C
VS = 13.5 V,
Io = 0.1 mA to 1 mA,
En = high
VS = 13.5 V,
Io = 150 mA,
En = high
Min. Typ. Max. Unit
4.9 5.0 5.1 V
4.85 5.0 5.15 V
4.75 5.0 5.25 V
0.65 0.95 1.25 A
280 470 660 mA
40 mV
55
mV
40
500 mV
60
dB
8
mA
1.1 mA
0.8
mA
5 10 µA
55 80
µA
95
3.2 4.2 mA
8/29
Doc ID 15540 Rev. 12

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]