VS-ST173S Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-ST173S Datasheet PDF : 11 Pages
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VS-ST173S Series
Vishay Semiconductors
100 000
10 000
1000
4
2
1
20 joules per pulse
7.5
0.5
0.3
0.2
0.1
100
ST173S Series
Sinusoidal pulse
tp
10
10
100
1000
10 000
Pulse Basewidth (µs)
100 000
10 000
1000
100
ST173S Series
Rectangular pulse
tp dI/dt = 50 A/µs
20 joules per pulse
23
1
0.4 0.5
0.3
0.2
5 10
0.1
10
10
100
1000
Pulse Basewidth (µs)
10 000
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
10
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST173S Series
Frequency limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 11-Mar-14
7
Document Number: 94367
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