VS-ST173S Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-ST173S Datasheet PDF : 11 Pages
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VS-ST173S Series
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ITM
180° el
500
320
450
290
330
190
170
80
50
VDRM
50
60
85
47/0.22
ITM
180° el
790
550
810
540
760
490
510
300
50
VDRM
-
60
85
47/0.22
ITM
100 µs
4510
3310
1970
1350
1050
680
480
280
50
VDRM
-
60
85
47/0.22
UNITS
A
V
A/μs
°C
μF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I2t
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
VALUES
175
85
275
4680
4900
3940
4120
110
100
77
71
1100
2.07
1.55
1.58
0.87
0.82
600
1000
UNITS
A
°C
A
kA2s
kA2s
V
m
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
Maximum turn-off time
minimum
maximum
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
VALUES
1000
1.1
15
25
UNITS
A/μs
μs
Revision: 11-Mar-14
2
Document Number: 94367
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