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VS-SD200N Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
VS-SD200N
Vishay
Vishay Semiconductors Vishay
VS-SD200N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
www.vishay.com
4500
4000
3500
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3000
2500
2000
1500 SD200N/R Series
1000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10 000
SD200N/R Series
VS-SD200N/R Series
Vishay Semiconductors
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj max.
No Voltage Reapplied
Rated Vrrm Reapplied
3000
2500
2000
1500 SD200N/R Series
1000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Tj = 25 °C
Tj = Tj max.
100
0.5 1 1.5 2 2.5 3 3.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value:
R thJC = 0.23 K/W
(DC Operation)
0.1
SD200N/R Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 11-Jan-18
4
Document Number: 93541
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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