1.5SMC82AT3G Просмотр технического описания (PDF) - ON Semiconductor
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1.5SMC82AT3G Datasheet PDF : 7 Pages
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1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK
1500
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance, Junction−to−Lead
PD
RqJL
4.0
W
54.6
mW/°C
18.3
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.75
W
6.1
mW/°C
165
°C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
200
A
Operating and Storage Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive
2. 1 in. square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 100 A)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT
Test Current
QVBR Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty
cycle
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
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