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P6SMB11CA-E3/52 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
P6SMB11CA-E3/52
Vishay
Vishay Semiconductors Vishay
P6SMB11CA-E3/52 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
100
Peak Value
IPPM
where the Peak Current
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
6000
1000
Measured at
Zero Bias
VR, Measured at
100
Stand-Off Voltage VWM
10
1
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
100 200
VWM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
10
1.0
0.1
0.001 0.01 0.1
1
10
100 1000
tp - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
P6SMB Series
Vishay General Semiconductor
200
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1
10
100
Number of Cycles at 60 Hz
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 14-Dec-12
4
Document Number: 88370
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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