SI2305DS-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2305DS-T1-GE3 Datasheet PDF : 8 Pages
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Si2305DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwse noted
12
12
VGS = 4.5 thru 2.5 V
2V
10
10
8
8
6
6
TC = - 55 °C
25 °C
125 °C
4
1.5 V
4
2
1 V, 0.5 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.30
2
0
0
2000
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.25
0.20
0.15
0.10
0.05
0
0
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
2
4
6
8
10
12
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 4 V
ID = 3.5 A
4
3
2
1
1600
Ciss
1200
800
Coss
400
Crss
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Capacitance
1.4
VGS = 4.5 V
ID = 3.5 A
1.2
1.0
0.8
0
0
2
4
6
8
10
Qg - T otal Gate Charge (nC)
Gate Charge
Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3
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