VS-SD203N25S20PC Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-SD203N25S20PC Datasheet PDF : 10 Pages
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www.vishay.com
VS-SD203N/R Series
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version) 200 A
DO-9 (DO-205AB)
PRIMARY CHARACTERISTICS
IF(AV)
Package
200 A
DO-9 (DO-205AB)
Circuit configuration
Single
FEATURES
• High power fast recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version JEDEC® DO-9 (DO-205AB)
• Maximum junction temperature 125 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IF(RMS)
IFSM
I2t
VRRM
trr
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
Range
TJ
VALUES
200
85
314
4990
5230
125
114
400 to 2500
1.0 to 2.0
25
-40 to +125
UNITS
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-SD203N/R..S10
08
10
12
VS-SD203N/R..S15
14
16
20
VS-SD203N/R..S20
25
VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1000
1200
1400
1600
2000
2500
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1100
1300
1500
1700
2100
2600
IRRM MAXIMUM
TJ = 125 °C
mA
35
Revision: 11-Jan-18
1
Document Number: 93170
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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