2SB852KT146B Просмотр технического описания (PDF) - ROHM Semiconductor
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2SB852KT146B Datasheet PDF : 4 Pages
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
2SB852K / 2SA830S
Min.
−40
−32
−6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
200
3
Max.
−
−
−
−1
−1
−
−1.5
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC= −100µA
IC= −1mA
IE= −100µA
VCB= −24V
VEB= −4.5V
VCE= −5V, IC= −0.1A
IC= −200mA, IB= −0.4mA
∗1
VCE= −5V, IE=10mA, f=100MHz ∗2
VCB= −10V, IE=0A, f=1MHz
zElectrical characteristic curves
125
100
75
50
25
0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Power dissipation curves
−500 VCE= −6V
−200
−100
−50
−20
−10
−5
−2
0
−0.4 −0.8
−1.2 −1.6
−2.0 −2.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristisc
−100
−80
−10µA
−9µA
−8µA
Ta=25°C
−7µA
−60
−6µA
−5µA
−40
−4µA
−3µA
−20
−2µA
0
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Ground emitter output characteristics
100000
Ta=25°C
50000
20000
−5V
10000
5000
2000
VCE= −3V
1000
500
200
100
−2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
VCE= −5V
50000
Ta=100°C
20000
25°C
10000
5000
−55°C
2000
1000
500
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
−20
IC/IB=500
−10
−5
−2
−1
Ta= −55°C
−0.5
25°C 100°C
−0.2
−0.1
−5
−10 −20
−50 −100 −200 −500 −1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Rev.A
2/3
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