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NT511740D0J

16MEG : x4 Fast Page Mode DRAM

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NT511740D0J

16MEG : x4

Fast Page Mode DRAM

DESCRIPTION

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of

memory cells within the same row. Power supply voltage (+5.0V ), refresh cycle (2K Ref), access time (-5 or -6), power

consumption (Normal or Low power) and package type (SOJ) are optional features of this family.

All of this family have CAS -before- RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-

refresh operation is available in L-version. This 4Mx4 EDO Mode DRAM family is fabricated using NANYA’s advanced

CMOS process to realize high bandwidth, low power consumption and high reliability.

It may be used as main memory unit for microcomputer, high level computer and personal computer .

FEATURES

• Fast Page Mode operation .

• TTL(5V) compatible inputs and outputs

• Single +5V ± 10% power supply

• JEDEC Standard pinout

• CAS before RAS refresh, hidden refresh, RAS -only refresh capability

• Refresh : 2048 cycles / 32 ms

• Self-refresh capability (L-ver only)

• Multi-bit test mode capability

• Available in plastic SOJ packages

PRODUCT FAMILY

Family

NT511740D0J - 50/5L

NT511740D0J - 60/6L

Access Time (Max.)

tRAC tCAC tRC

tPC

50ns 13ns 90ns 35ns

60ns 15ns 110ns 40ns

Active Power

Dissipation

605mW

550mW

Voltage

5V

Package

26(24)-pin

SOJ

REV 1.0 , JULY. 2000

3

© NANYA TECHNOLOGY CORP.

NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice.

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